Neutron dosimetry with planar silicon p-i-n diodes

Photoresponse spectra in p–i–n diodes containing quantum dots

The photoresponsivity spectra of a p–i–n diode comprising of a layer of quantum dots (QD) in the intrinsic region are measured for a wide range of wavelengths of light and applied voltages. The complex behaviour of the measured spectra is analysed taking into account different channels for electron and hole capture onto the QD and their escape dynamics. The photocurrent data are accompanied by ...

Current impulse response of thin InP p+-i-n+ diodes

The simulation of current impulse response using random response time model in avalanche photodiode is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin avalanche photodiodes. Curr...

Electrical characterization of transparent p – i – n heterojunction diodes

Transparent p – i – n heterojunction diodes are fabricated using heavily doped, p-type CuYO2 and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range 24–4 V. The forward-bias current–voltage characteristics are dominated by the flow of space-charge-l...

Boron carbide/n-silicon carbide heterojunction diodes

Neutron dosimetry

R É S U M É En dosimétrie des neutrons, les situations pratiques rencontrées couvrent un large domaine d'énergie s'étendant sur plus de 10 décades. En outre, les grandeurs dosimétriques utilisées en radioprotection ne sont pas directement accessibles à la mesure. Ce dernier point est principalement dû à la variation de la "qualité" du rayonnement neutronique, exprimé au moyen des facteurs de po...